this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. december 2014 docid024614 rev 2 1/15 15 STS5P3LLH6 p-channel 30 v, 0.048 ? typ., 5 a stripfet? h6 deepgate? power mosfet in an so-8 package datasheet - preliminary data figure 1. internal schematic diagram features ? very low on-resistance r ds(on) ? very low gate charge ? high avalanche ruggedness ? low gate drive power loss applications ? switching applications description this device is a p-channel power mosfet developed using the stripfet? h6 technology with a new trench gate structure. the resulting power mosfet exhibits very low r ds(on) in all packages. note: for the p-channel mosfet actual polarity of voltages and current has to be reversed. so-8 6 & |